Three-phase modular multilevel converter with series-connected power submodules (2024)

Table of Contents
Description Piecewise Constant Approximation in Averaged Switch for FPGA Deployment Variables Ports Input G — Submodule gate controlmatrix of physical signals ref — Submodule reference waveform vector of physical signals Output vc — Capacitor voltagesvector of physical signals Conserving + — Positive terminalelectrical - — Negative terminal electrical ~ — Three-phase port electrical a — a-phase electrical b — b-phase electrical c — c-phase electrical Parameters Main Electrical connection — Electrical connectionComposite three-phaseports (default) | Expanded three-phase ports Converter topology — Converter topology Half-bridge (default) | Full-bridge Fidelity level — Model fidelity Detailed model - switchingdevices (default) | Equivalent model - PWM-controlled | Equivalent model -waveform-controlled Capacitor voltages — Capacitor voltage instrumentation Instrumented (default) | Uninstrumented Number of power submodules — Number of submodules 1 (default) | positive scalar Capacitance — Submodule capacitance 1e-7F (default) | scalar | vector Capacitor effective series resistance — Capacitor effective series resistance 1e-6Ohm (default) | scalar | vector Arm inductance — Arm inductance 1e-6H (default) | scalar Arm inductance series resistance — Arm inductance series resistance 0Ohm (default) | scalar Capacitor initial voltage — Capacitor initial voltage 500V (default) | scalar | vector Switching Devices Switching device — Switch type Ideal SemiconductorSwitch (default) | GTO | IGBT | MOSFET | Thyristor | Averaged Switch Forward voltage — Voltage 0.8V (default) | scalar On-state resistance — Resistance 0.001Ohm (default) | scalar Drain-source on resistance — Resistance 0.001Ohm (default) | scalar Off-state conductance — Conductance when device is off 1e-51/Ohm (default) | scalar Threshold voltage — Voltage threshold 6V (default) | scalar Gate trigger voltage, Vgt — Gate-cathode activation voltage threshold 1V (default) | scalar Gate turn-off voltage, Vgt_off — Gate-cathode deactivation voltage threshold -1V (default) | scalar Holding current — Current threshold 1A (default) | scalar Integer for piecewise constant approximation of gate input (0 for disabled) — Integer mode for FPGA deployment 0 (default) | nonnegative scalar Protection Diodes Model dynamics — Diode modelDiode with nodynamics (default) | Diode with charge dynamics | None Forward voltage — Forward voltage 0.8V (default) | scalar On resistance — On resistance 0.001Ohm (default) | scalar Off conductance — Off conductance 1e-51/Ohm (default) | scalar Junction capacitance — Junction capacitance 50nF (default) | scalar Peak reverse current, iRM — Peak reverse current -235A (default) | negative scalar Initial forward current when measuring iRM — Initial forward current when measuring iRM 300A (default) | positive scalar Rate of change of current when measuring iRM — Rate of change of current when measuring iRM -50A/μs (default) | negative scalar Reverse recovery time parameterization — Reverse recovery time option Specify stretchfactor (default) | Specify reverse recovery timedirectly | Specify reverse recovery charge Reverse recovery time, trr — Reverse recovery time 15μs (default) | scalar Reverse recovery time stretch factor — Reverse recovery time stretch factor 3 (default) | scalar Reverse recovery charge, Qrr — Reverse recovery charge 1500s*μA (default) | scalar Snubbers Snubber — Snubber None (default) | RC snubber Snubber resistance — Snubber resistance 0.1Ohm (default) | scalar Snubber capacitance — Snubber capacitance 1e-7F (default) | scalar References Extended Capabilities C/C++ Code Generation Generate C and C++ code using Simulink® Coder™. Version History R2021b: Electrical connection ports update See Also MATLAB-Befehl Americas Europe Asia Pacific References

Three-phase modular multilevel converter with series-connected powersubmodules

Since R2020b

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  • Three-phase modular multilevel converter with series-connected powersubmodules (1)

Libraries:
Simscape / Electrical / Semiconductors & Converters / Converters

Description

The Modular Multilevel Converter (Three-Phase) blockmodels a three-phase modular multilevel converter. Each phase consists of two arms thatare implemented with a number of series-connected power submodules.

Three-phase modular multilevel converter with series-connected powersubmodules (2)

Each submodule consists of a half-bridge or full-bridge converter and acapacitor.

Half-Bridge Topology

Three-phase modular multilevel converter with series-connected powersubmodules (3)

Full-Bridge Topology

Three-phase modular multilevel converter with series-connected powersubmodules (4)

This blocks allows you to select the level of model fidelity by choosing between adetailed model with switching devices or an equivalent model. You can choose from theseswitching devices are:

  • GTO — Gate turn-off thyristor. For information about the I-V characteristic of the device, see GTO.

  • Ideal semiconductor switch — For information about the I-V characteristic of the device, see Ideal Semiconductor Switch.

  • IGBT — Insulated-gate bipolar transistor. For information about the I-V characteristic of the device, see IGBT (Ideal, Switching).

  • MOSFET — N-channel metal-oxide-semiconductor field-effect transistor. For information about the I-V characteristic of the device, see MOSFET (Ideal, Switching).

  • Thyristor — For information about the I-V characteristic of the device, see Thyristor (Piecewise Linear).

  • Averaged Switch — Semiconductor switch with an antiparallel diode. The control signal port G accepts values in the interval [0,1]. When G is equal to 0 or 1, the averaged switch is fully opened or fully closed respectively. The switch behaves similarly to the Ideal Semiconductor Switch block with an antiparallel diode. When G is between 0 and 1, the averaged switch is partly opened. You can average the pulse-width modulation (PWM) signal over a specified period. You can then undersample the model and use modulation waveforms instead of PWM signals.

Piecewise Constant Approximation in Averaged Switch for FPGA Deployment

If you set the Switching device parameter to Averaged switch and your model uses a partitioning solver, this block produces nonlinear partitions because the average mode equations include modes, Gsat that are functions of the input G. To make these equations compatible with hardware description language (HDL) code generation, and therefore FPGA deployment, set the Integer for piecewise constant approximation of gate input (0 for disabled) parameter to a value greater than 0. This block then treats the Gsat mode as a piecewise constant integer with a fixed range. This turns the previously nonlinear partitions to linear time varying partitions.

An integer value in the range [0,K], where K is the value of the Integer for piecewise constant approximation of gate input (0 for disabled), is now associated with each real value mode in the range [0,1]. The block computes the piecewise constant mode by dividing the original mode by K to normalize it back to the range [0,1]:

uI=(floor(uK))u^=uIK

Variables

To set the priority and initial target values for the block variables before simulation, use the Initial Targets section in the block dialog box or Property Inspector. For more information, see Set Priority and Initial Target for Block Variables.

Nominal values provide a way to specify the expected magnitude of a variable in a model. Using system scaling based on nominal values increases the simulation robustness. You can specify nominal values using different sources, including the Nominal Values section in the block dialog box or Property Inspector. For more information, see System Scaling by Nominal Values.

Ports

Input

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Physical signal port associated with the gate signal for allsubmodules of the modular multilevel converter, specified as amatrix.

If you set the Converter topology parameter toHalf-bridge, the signal is a vector oflength 12 * Nsm, where Nsm isthe Number of power submodules.

If you set the Converter topology parameter toFull-bridge, the signal is a vector oflength 24 * Nsm.

Dependencies

To enable this port, set Fidelity level toDetailed model - switching devices orEquivalent model -PWM-controlled.

Physical signal port associated with the reference waveforms of the submodules,specified as a vector of length 6.

Dependencies

To enable this port, set Fidelity level toEquivalent model -waveform-controlled.

Output

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Physical signal port associated with the capacitor voltages for each submodule in themodular multilevel converter, returned as a vector.

Dependencies

To enable this port, set Capacitor voltagesto Instrumented.

Conserving

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Electrical conserving port associated with the positive terminal ofthe modular multilevel converter.

Electrical conserving port associated with the negative terminal ofthe modular multilevel converter.

Expandable three-phaseelectrical port associated with the three-phase terminal ofthe modular multilevel converter.

Dependencies

To enable this port, set Electricalconnection to Composite three-phaseports.

Electrical conserving port associated witha-phase.

Dependencies

To enable this port, set Electricalconnection to Expanded three-phaseports.

Electrical conserving port associated withb-phase.

Dependencies

To enable this port, set Electricalconnection to Expanded three-phaseports.

Electrical conserving port associated withc-phase.

Dependencies

To enable this port, set Electricalconnection to Expanded three-phaseports.

Parameters

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Main

Whether to have composite or expanded three-phase ports.

Topology of the modular multilevel converter.

Level of fidelity of the model.

Whether to instrument the capacitor voltages.

Number of power submodules of the modular multilevel converter.

Capacitance of a submodule. If you enter a vector, the vector must be of length6 * Nsm, where Nsm is theNumber of power submodules.

Capacitor effective series resistance. If you enter a vector, the vector must be oflength 6 * Nsm, where Nsm isthe Number of power submodules.

Dependencies

To enable this parameter, set Fidelity levelto Detailed model - switching devices.

Inductance of the arm.

Arm inductance series resistance.

Initial voltage of the capacitor. If you enter a vector, the vector must be of length6 * Nsm, where Nsm is theNumber of power submodules.

Switching Devices

This table shows how enabled parameters in the Switching Devicessettings depend on the Switching device that you select. Tolearn how to read the table, see Parameter Dependencies. To enable these settings, setFidelity level to Detailed model - switchingdevices.

Switching Devices Parameter Dependencies

Parameters andOptions
Switching device
Ideal SemiconductorSwitchGTOIGBTMOSFETThyristorAveragedSwitch
On-state resistanceForward voltageForward voltageDrain-source on resistanceForward voltageOn-state resistance
Off-state conductanceOn-state resistanceOn-state resistanceOff-state conductanceOn-state resistance
Threshold voltageOff-state conductanceOff-state conductanceThreshold voltageOff-state conductance
Gate trigger voltage, VgtThreshold voltageGate trigger voltage, VgtInteger for piecewise constantapproximation of gate input (0 fordisabled)
Gate turn-off voltage, Vgt_offHolding current
Holding current

Switching device type for the converter.

Dependencies

See the Switching Devices Parameter Dependencies table.

For the different switching device types, the Forward voltage is the:

  • GTO — Minimum voltage required across the anode andcathode block ports for the gradient of the device I-Vcharacteristic to be1/Ron, whereRon is thevalue of On-state resistance

  • IGBT — Minimum voltage required across the collector andemitter block ports for the gradient of the diode I-Vcharacteristic to be1/Ron, whereRon is thevalue of On-state resistance

  • Thyristor — Minimum voltage required for the device toturn on

Dependencies

See the Switching Devices Parameter Dependencies table.

For the different switching device types, the On-state resistanceis the:

  • GTO — Rate of change of the voltage versus the currentabove the forward voltage

  • Ideal semiconductor switch — Anode-cathode resistance whenthe device is on

  • IGBT — Collector-emitter resistance when the device ison

  • Thyristor — Anode-cathode resistance when the device ison

  • Averaged switch — Anode-cathode resistance when the deviceis on

Dependencies

See the Switching Devices Parameter Dependencies table.

Resistance between the drain and the source. The gate-to-source voltage also affects theDrain-source on resistance parameter.

Dependencies

See the Switching Devices Parameter Dependencies table.

Conductance when the device is off. The value must be less than1/R, where R is the value ofOn-state resistance.

For the different switching device types, the On-stateresistance is the:

  • GTO — Anode-cathode conductance

  • Ideal semiconductor switch — Anode-cathodeconductance

  • IGBT — Collector-emitter conductance

  • MOSFET — Drain-source conductance

  • Thyristor — Anode-cathode conductance

Dependencies

See the Switching Devices Parameter Dependencies table.

Gate voltage threshold. The device turns on when the gate voltage is above this value.The voltage threshold applies to different devices depending on theswitching device used:

  • Ideal semiconductor switch — Gate-cathode voltage

  • IGBT — Gate-emitter voltage

  • MOSFET — Gate-source voltage

Dependencies

See the Switching Devices Parameter Dependencies table.

Gate-cathode voltage threshold. The device turns on when thegate-cathode voltage is above this value.

Dependencies

See the Switching Devices Parameter Dependencies table.

Gate-cathode voltage threshold. The device turns off when thegate-cathode voltage is below this value.

Dependencies

See the Switching Devices Parameter Dependencies table.

Gate current threshold. The device stays on when the current is abovethis value, even when the gate-cathode voltage falls below the gatetrigger voltage.

Dependencies

See the Switching Devices Parameter Dependencies table.

Integer used to perform piecewise constant approximation of the gate input for FPGA deployment.

Dependencies

To enable this parameter, set Switching device to Averaged Switch.

Protection Diodes

For more information on these parameters, see Diode.

Diode type. The options are:

  • None — The block does not modeldiode dynamics.

  • Diode with no dynamics — Selectthis option to prioritize simulation speed using theDiodeblock.

  • Diode with charge dynamics —Select this option to prioritize model fidelity in terms ofreverse mode charge dynamics using the commutation diodemodel of the Diodeblock.

Note

If you set Switching device toAveraged Switch in theSwitching Device settings, theDiode with no dynamics setting isautomatically selected.

Dependencies

To enable this parameter, set Switchingdevice to GTO,Ideal Semiconductor Switch,IGBT,MOFSET, orThyristor.

Minimum voltage required across the + and - blockports for the gradient of the diode I-V characteristic to be1/Ron, whereRon is the value ofOn resistance.

Dependencies

To enable this parameter, set Model dynamicsto Diode with no dynamics orDiode with charge dynamics.

Rate of change of voltage versus the current above the Forwardvoltage.

Dependencies

To enable this parameter, set Model dynamicsto Diode with no dynamics orDiode with charge dynamics.

Conductance of the reverse-biased diode.

Dependencies

To enable this parameter, set Model dynamicsto Diode with no dynamics orDiode with charge dynamics.

Diode junction capacitance.

Dependencies

To enable this parameter, set Model dynamicsto Diode with charge dynamics.

Peak reverse current measured by an external test circuit. This valuemust be less than zero.

Dependencies

To enable this parameter, set Model dynamicsto Diode with charge dynamics.

Initial forward current when measuring peak reverse current. Thisvalue must be greater than zero.

Dependencies

To enable this parameter, set Model dynamicsto Diode with charge dynamics.

Rate of change of the current when measuring the peak reverse current. This value mustbe less than zero.

Dependencies

To enable this parameter, set Model dynamicsto Diode with charge dynamics.

Determines how you specify reverse recovery time.

If you select Specify stretch factor orSpecify reverse recovery charge, youspecify a value that the block uses to derive the reverse recovery time.For more information on these options, see How the Block Calculates TM and Tau.

Dependencies

To enable this parameter, set Model dynamicsto Diode with charge dynamics.

Interval between the time when the current initially goes to zero(when the diode turns off) and the time when the current falls to lessthan 10% of the peak reverse current. The value of the Reverserecovery time, trr parameter must be greater than thevalue of the Peak reverse current, iRM parameterdivided by the value of the Rate of change of current whenmeasuring iRM parameter.

Dependencies

To enable this parameter, set Model dynamicsto Diode with charge dynamics andReverse recovery time parameterization toSpecify reverse recovery timedirectly.

Value that the block uses to calculate Reverse recoverytime, trr. This value must be greater than1. Specifying the stretch factor is an easier wayto parameterize the reverse recovery time than specifying the reverserecovery charge. The larger the value of the stretch factor, the longerit takes for the reverse recovery current to dissipate.

Dependencies

To enable this parameter, set Model dynamicsto Diode with charge dynamics andReverse recovery time parameterization toSpecify stretch factor.

Value that the block uses to calculate Reverse recovery time, trr.Use this parameter if the data sheet for your diode specifies a valuefor the reverse recovery charge instead of a value for the reverserecovery time.

The reverse recovery charge is the total charge that continues to dissipate when thediode turns off. The value must be less than i2RM2a, where:

  • iRM is the valuespecified for Peak reverse current,iRM.

  • a is the value specified for Rateof change of current when measuring iRM.

Dependencies

To enable this parameter, set Model dynamicsto Diode with charge dynamics andReverse recovery time parameterization toSpecify reverse recovery charge.

Snubbers

To enable the Snubbers settings, set Fidelitylevel to Detailed model - switchingdevices and Switching device toGTO, Ideal SemiconductorSwitch, IGBT,MOFSET, orThyristor.

Snubber for each switching device:

  • None

  • RC snubber

Snubber resistance.

Dependencies

To enable this parameter, set Snubber toRC snubber.

Snubber capacitance.

Dependencies

To enable this parameter, set Snubber toRC snubber.

References

[1] Saad, Hani, Sebastien Dennetiere,and Jean Mahseredjian. “On Modelling of MMC in EMT-Type Program.”2016 IEEE 17th Workshop on Control and Modeling for Power Electronics (COMPEL), 1–7.Trondheim, Norway: IEEE, 2016.https://doi.org/10.1109/COMPEL.2016.7556717.

Extended Capabilities

C/C++ Code Generation
Generate C and C++ code using Simulink® Coder™.

Version History

Introduced in R2020b

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See Also

Average-Value DC-DCConverter | Bidirectional DC-DCConverter | BuckConverter | Buck-BoostConverter | Converter (Three-Phase) | GTO | IGBT (Ideal, Switching) | MOSFET (Ideal, Switching) | Ideal Semiconductor Switch | PWMGenerator | PWM Generator (Three-phase,Two-level) | Three-Level Converter (Three-Phase) | Thyristor (Piecewise Linear) | Boost Converter | PWM Generator (Multilevel) | Modular Multilevel Converter Arm | Modular Multilevel Converter Leg

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Three-phase modular multilevel converter with series-connected power
submodules (2024)

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