Three-phase modular multilevel converter with series-connected powersubmodules
Since R2020b
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Simscape / Electrical / Semiconductors & Converters / Converters
Description
The Modular Multilevel Converter (Three-Phase) blockmodels a three-phase modular multilevel converter. Each phase consists of two arms thatare implemented with a number of series-connected power submodules.
Each submodule consists of a half-bridge or full-bridge converter and acapacitor.
Half-Bridge Topology
Full-Bridge Topology
This blocks allows you to select the level of model fidelity by choosing between adetailed model with switching devices or an equivalent model. You can choose from theseswitching devices are:
GTO — Gate turn-off thyristor. For information about the I-V characteristic of the device, see GTO.
Ideal semiconductor switch — For information about the I-V characteristic of the device, see Ideal Semiconductor Switch.
IGBT — Insulated-gate bipolar transistor. For information about the I-V characteristic of the device, see IGBT (Ideal, Switching).
MOSFET — N-channel metal-oxide-semiconductor field-effect transistor. For information about the I-V characteristic of the device, see MOSFET (Ideal, Switching).
Thyristor — For information about the I-V characteristic of the device, see Thyristor (Piecewise Linear).
Averaged Switch — Semiconductor switch with an antiparallel diode. The control signal port G accepts values in the interval [0,1]. When G is equal to
0
or1
, the averaged switch is fully opened or fully closed respectively. The switch behaves similarly to the Ideal Semiconductor Switch block with an antiparallel diode. When G is between 0 and 1, the averaged switch is partly opened. You can average the pulse-width modulation (PWM) signal over a specified period. You can then undersample the model and use modulation waveforms instead of PWM signals.
Piecewise Constant Approximation in Averaged Switch for FPGA Deployment
If you set the Switching device parameter to Averaged switch
and your model uses a partitioning solver, this block produces nonlinear partitions because the average mode equations include modes, Gsat that are functions of the input G. To make these equations compatible with hardware description language (HDL) code generation, and therefore FPGA deployment, set the Integer for piecewise constant approximation of gate input (0 for disabled) parameter to a value greater than 0
. This block then treats the Gsat mode as a piecewise constant integer with a fixed range. This turns the previously nonlinear partitions to linear time varying partitions.
An integer value in the range [0,K]
, where K is the value of the Integer for piecewise constant approximation of gate input (0 for disabled), is now associated with each real value mode in the range [0,1]
. The block computes the piecewise constant mode by dividing the original mode by K to normalize it back to the range [0,1]
:
Variables
To set the priority and initial target values for the block variables before simulation, use the Initial Targets section in the block dialog box or Property Inspector. For more information, see Set Priority and Initial Target for Block Variables.
Nominal values provide a way to specify the expected magnitude of a variable in a model. Using system scaling based on nominal values increases the simulation robustness. You can specify nominal values using different sources, including the Nominal Values section in the block dialog box or Property Inspector. For more information, see System Scaling by Nominal Values.
Ports
Input
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G — Submodule gate control
matrix of physical signals
Physical signal port associated with the gate signal for allsubmodules of the modular multilevel converter, specified as amatrix.
If you set the Converter topology parameter toHalf-bridge
, the signal is a vector oflength 12 * Nsm, where Nsm isthe Number of power submodules.
If you set the Converter topology parameter toFull-bridge
, the signal is a vector oflength 24 * Nsm.
Dependencies
To enable this port, set Fidelity level toDetailed model - switching devices
orEquivalent model -PWM-controlled
.
ref — Submodule reference waveform
vector of physical signals
Physical signal port associated with the reference waveforms of the submodules,specified as a vector of length 6.
Dependencies
To enable this port, set Fidelity level toEquivalent model -waveform-controlled
.
Output
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vc — Capacitor voltages
vector of physical signals
Physical signal port associated with the capacitor voltages for each submodule in themodular multilevel converter, returned as a vector.
Dependencies
To enable this port, set Capacitor voltagesto Instrumented
.
Conserving
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+ — Positive terminal
electrical
Electrical conserving port associated with the positive terminal ofthe modular multilevel converter.
- — Negative terminal
electrical
Electrical conserving port associated with the negative terminal ofthe modular multilevel converter.
~ — Three-phase port
electrical
Expandable three-phaseelectrical port associated with the three-phase terminal ofthe modular multilevel converter.
Dependencies
To enable this port, set Electricalconnection to Composite three-phaseports
.
a — a-phase
electrical
Electrical conserving port associated witha-phase.
Dependencies
To enable this port, set Electricalconnection to Expanded three-phaseports
.
b — b-phase
electrical
Electrical conserving port associated withb-phase.
Dependencies
To enable this port, set Electricalconnection to Expanded three-phaseports
.
c — c-phase
electrical
Electrical conserving port associated withc-phase.
Dependencies
To enable this port, set Electricalconnection to Expanded three-phaseports
.
Parameters
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Main
Electrical connection — Electrical connection
Composite three-phaseports
(default) | Expanded three-phase ports
Whether to have composite or expanded three-phase ports.
Converter topology — Converter topology
Half-bridge
(default) | Full-bridge
Topology of the modular multilevel converter.
Fidelity level — Model fidelity
Detailed model - switchingdevices
(default) | Equivalent model - PWM-controlled
| Equivalent model -waveform-controlled
Level of fidelity of the model.
Capacitor voltages — Capacitor voltage instrumentation
Instrumented
(default) | Uninstrumented
Whether to instrument the capacitor voltages.
Number of power submodules — Number of submodules
1
(default) | positive scalar
Number of power submodules of the modular multilevel converter.
Capacitance — Submodule capacitance
1e-7
F
(default) | scalar | vector
Capacitance of a submodule. If you enter a vector, the vector must be of length6 * Nsm, where Nsm is theNumber of power submodules.
Capacitor effective series resistance — Capacitor effective series resistance
1e-6
Ohm
(default) | scalar | vector
Capacitor effective series resistance. If you enter a vector, the vector must be oflength 6 * Nsm, where Nsm isthe Number of power submodules.
Dependencies
To enable this parameter, set Fidelity levelto Detailed model - switching devices
.
Arm inductance — Arm inductance
1e-6
H
(default) | scalar
Inductance of the arm.
Arm inductance series resistance — Arm inductance series resistance
0
Ohm
(default) | scalar
Arm inductance series resistance.
Capacitor initial voltage — Capacitor initial voltage
500
V
(default) | scalar | vector
Initial voltage of the capacitor. If you enter a vector, the vector must be of length6 * Nsm, where Nsm is theNumber of power submodules.
Switching Devices
This table shows how enabled parameters in the Switching Devicessettings depend on the Switching device that you select. Tolearn how to read the table, see Parameter Dependencies. To enable these settings, setFidelity level to Detailed model - switchingdevices
.
Switching Devices Parameter Dependencies
Parameters andOptions | |||||
---|---|---|---|---|---|
Switching device | |||||
Ideal SemiconductorSwitch | GTO | IGBT | MOSFET | Thyristor | AveragedSwitch |
On-state resistance | Forward voltage | Forward voltage | Drain-source on resistance | Forward voltage | On-state resistance |
Off-state conductance | On-state resistance | On-state resistance | Off-state conductance | On-state resistance | |
Threshold voltage | Off-state conductance | Off-state conductance | Threshold voltage | Off-state conductance | |
Gate trigger voltage, Vgt | Threshold voltage | Gate trigger voltage, Vgt | Integer for piecewise constantapproximation of gate input (0 fordisabled) | ||
Gate turn-off voltage, Vgt_off | Holding current | ||||
Holding current |
Switching device — Switch type
Ideal SemiconductorSwitch
(default) | GTO
| IGBT
| MOSFET
| Thyristor
| Averaged Switch
Switching device type for the converter.
Dependencies
See the Switching Devices Parameter Dependencies table.
Forward voltage — Voltage
0.8
V
(default) | scalar
For the different switching device types, the Forward voltage is the:
GTO — Minimum voltage required across the anode andcathode block ports for the gradient of the device I-Vcharacteristic to be1/Ron, whereRon is thevalue of On-state resistance
IGBT — Minimum voltage required across the collector andemitter block ports for the gradient of the diode I-Vcharacteristic to be1/Ron, whereRon is thevalue of On-state resistance
Thyristor — Minimum voltage required for the device toturn on
Dependencies
See the Switching Devices Parameter Dependencies table.
On-state resistance — Resistance
0.001
Ohm
(default) | scalar
For the different switching device types, the On-state resistanceis the:
GTO — Rate of change of the voltage versus the currentabove the forward voltage
Ideal semiconductor switch — Anode-cathode resistance whenthe device is on
IGBT — Collector-emitter resistance when the device ison
Thyristor — Anode-cathode resistance when the device ison
Averaged switch — Anode-cathode resistance when the deviceis on
Dependencies
See the Switching Devices Parameter Dependencies table.
Drain-source on resistance — Resistance
0.001
Ohm
(default) | scalar
Resistance between the drain and the source. The gate-to-source voltage also affects theDrain-source on resistance parameter.
Dependencies
See the Switching Devices Parameter Dependencies table.
Off-state conductance — Conductance when device is off
1e-5
1/Ohm
(default) | scalar
Conductance when the device is off. The value must be less than1/R, where R is the value ofOn-state resistance.
For the different switching device types, the On-stateresistance is the:
GTO — Anode-cathode conductance
Ideal semiconductor switch — Anode-cathodeconductance
IGBT — Collector-emitter conductance
MOSFET — Drain-source conductance
Thyristor — Anode-cathode conductance
Dependencies
See the Switching Devices Parameter Dependencies table.
Threshold voltage — Voltage threshold
6
V
(default) | scalar
Gate voltage threshold. The device turns on when the gate voltage is above this value.The voltage threshold applies to different devices depending on theswitching device used:
Ideal semiconductor switch — Gate-cathode voltage
IGBT — Gate-emitter voltage
MOSFET — Gate-source voltage
Dependencies
See the Switching Devices Parameter Dependencies table.
Gate trigger voltage, Vgt — Gate-cathode activation voltage threshold
1
V
(default) | scalar
Gate-cathode voltage threshold. The device turns on when thegate-cathode voltage is above this value.
Dependencies
See the Switching Devices Parameter Dependencies table.
Gate turn-off voltage, Vgt_off — Gate-cathode deactivation voltage threshold
-1
V
(default) | scalar
Gate-cathode voltage threshold. The device turns off when thegate-cathode voltage is below this value.
Dependencies
See the Switching Devices Parameter Dependencies table.
Holding current — Current threshold
1
A
(default) | scalar
Gate current threshold. The device stays on when the current is abovethis value, even when the gate-cathode voltage falls below the gatetrigger voltage.
Dependencies
See the Switching Devices Parameter Dependencies table.
Integer for piecewise constant approximation of gate input (0 for disabled) — Integer mode for FPGA deployment
0
(default) | nonnegative scalar
Integer used to perform piecewise constant approximation of the gate input for FPGA deployment.
Dependencies
To enable this parameter, set Switching device to Averaged Switch
.
Protection Diodes
For more information on these parameters, see Diode.
Model dynamics — Diode model
Diode with nodynamics
(default) | Diode with charge dynamics
| None
Diode type. The options are:
None
— The block does not modeldiode dynamics.Diode with no dynamics
— Selectthis option to prioritize simulation speed using theDiodeblock.Diode with charge dynamics
—Select this option to prioritize model fidelity in terms ofreverse mode charge dynamics using the commutation diodemodel of the Diodeblock.
Note
If you set Switching device toAveraged Switch
in theSwitching Device settings, theDiode with no dynamics
setting isautomatically selected.
Dependencies
To enable this parameter, set Switchingdevice to GTO
,Ideal Semiconductor Switch
,IGBT
,MOFSET
, orThyristor
.
Forward voltage — Forward voltage
0.8
V
(default) | scalar
Minimum voltage required across the +
and -
blockports for the gradient of the diode I-V characteristic to be1/Ron, whereRon is the value ofOn resistance.
Dependencies
To enable this parameter, set Model dynamicsto Diode with no dynamics
orDiode with charge dynamics
.
On resistance — On resistance
0.001
Ohm
(default) | scalar
Rate of change of voltage versus the current above the Forwardvoltage.
Dependencies
To enable this parameter, set Model dynamicsto Diode with no dynamics
orDiode with charge dynamics
.
Off conductance — Off conductance
1e-5
1/Ohm
(default) | scalar
Conductance of the reverse-biased diode.
Dependencies
To enable this parameter, set Model dynamicsto Diode with no dynamics
orDiode with charge dynamics
.
Junction capacitance — Junction capacitance
50
nF
(default) | scalar
Diode junction capacitance.
Dependencies
To enable this parameter, set Model dynamicsto Diode with charge dynamics
.
Peak reverse current, iRM — Peak reverse current
-235
A
(default) | negative scalar
Peak reverse current measured by an external test circuit. This valuemust be less than zero.
Dependencies
To enable this parameter, set Model dynamicsto Diode with charge dynamics
.
Initial forward current when measuring iRM — Initial forward current when measuring iRM
300
A
(default) | positive scalar
Initial forward current when measuring peak reverse current. Thisvalue must be greater than zero.
Dependencies
To enable this parameter, set Model dynamicsto Diode with charge dynamics
.
Rate of change of current when measuring iRM — Rate of change of current when measuring iRM
-50
A/μs
(default) | negative scalar
Rate of change of the current when measuring the peak reverse current. This value mustbe less than zero.
Dependencies
To enable this parameter, set Model dynamicsto Diode with charge dynamics
.
Reverse recovery time parameterization — Reverse recovery time option
Specify stretchfactor
(default) | Specify reverse recovery timedirectly
| Specify reverse recovery charge
Determines how you specify reverse recovery time.
If you select Specify stretch factor
orSpecify reverse recovery charge
, youspecify a value that the block uses to derive the reverse recovery time.For more information on these options, see How the Block Calculates TM and Tau.
Dependencies
To enable this parameter, set Model dynamicsto Diode with charge dynamics
.
Reverse recovery time, trr — Reverse recovery time
15
μs
(default) | scalar
Interval between the time when the current initially goes to zero(when the diode turns off) and the time when the current falls to lessthan 10% of the peak reverse current. The value of the Reverserecovery time, trr parameter must be greater than thevalue of the Peak reverse current, iRM parameterdivided by the value of the Rate of change of current whenmeasuring iRM parameter.
Dependencies
To enable this parameter, set Model dynamicsto Diode with charge dynamics
andReverse recovery time parameterization toSpecify reverse recovery timedirectly
.
Reverse recovery time stretch factor — Reverse recovery time stretch factor
3
(default) | scalar
Value that the block uses to calculate Reverse recoverytime, trr. This value must be greater than1
. Specifying the stretch factor is an easier wayto parameterize the reverse recovery time than specifying the reverserecovery charge. The larger the value of the stretch factor, the longerit takes for the reverse recovery current to dissipate.
Dependencies
To enable this parameter, set Model dynamicsto Diode with charge dynamics
andReverse recovery time parameterization toSpecify stretch factor
.
Reverse recovery charge, Qrr — Reverse recovery charge
1500
s*μA
(default) | scalar
Value that the block uses to calculate Reverse recovery time, trr.Use this parameter if the data sheet for your diode specifies a valuefor the reverse recovery charge instead of a value for the reverserecovery time.
The reverse recovery charge is the total charge that continues to dissipate when thediode turns off. The value must be less than where:
iRM is the valuespecified for Peak reverse current,iRM.
a is the value specified for Rateof change of current when measuring iRM.
Dependencies
To enable this parameter, set Model dynamicsto Diode with charge dynamics
andReverse recovery time parameterization toSpecify reverse recovery charge
.
Snubbers
To enable the Snubbers settings, set Fidelitylevel to Detailed model - switchingdevices
and Switching device toGTO
, Ideal SemiconductorSwitch
, IGBT
,MOFSET
, orThyristor
.
Snubber — Snubber
None
(default) | RC snubber
Snubber for each switching device:
None
RC snubber
Snubber resistance — Snubber resistance
0.1
Ohm
(default) | scalar
Snubber resistance.
Dependencies
To enable this parameter, set Snubber toRC snubber
.
Snubber capacitance — Snubber capacitance
1e-7
F
(default) | scalar
Snubber capacitance.
Dependencies
To enable this parameter, set Snubber toRC snubber
.
References
[1] Saad, Hani, Sebastien Dennetiere,and Jean Mahseredjian. “On Modelling of MMC in EMT-Type Program.”2016 IEEE 17th Workshop on Control and Modeling for Power Electronics (COMPEL), 1–7.Trondheim, Norway: IEEE, 2016.https://doi.org/10.1109/COMPEL.2016.7556717.
Extended Capabilities
C/C++ Code Generation
Generate C and C++ code using Simulink® Coder™.
Version History
Introduced in R2020b
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R2021b: Electrical connection ports update
From R2021b forward, to switch between composite and expanded ports, set theElectrical connection parameter to eitherComposite three-phase ports
or Expandedthree-phase ports
.
As a result of these changes, inside a model saved in an earlier release, reviewthe Electrical connection parameter of this block.
See Also
Average-Value DC-DCConverter | Bidirectional DC-DCConverter | BuckConverter | Buck-BoostConverter | Converter (Three-Phase) | GTO | IGBT (Ideal, Switching) | MOSFET (Ideal, Switching) | Ideal Semiconductor Switch | PWMGenerator | PWM Generator (Three-phase,Two-level) | Three-Level Converter (Three-Phase) | Thyristor (Piecewise Linear) | Boost Converter | PWM Generator (Multilevel) | Modular Multilevel Converter Arm | Modular Multilevel Converter Leg
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